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| FDC638APZ P-Channel 2.5V PowerTrench(R) Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench(R) Specified MOSFET -20V, -4.5A, 43m Features Max rDS(on) = 43m at VGS = -4.5V, ID = -4.5A Max rDS(on) = 68m at VGS = -2.5V, ID = -3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM -6 package:small footprint (72% smaller than standard SO-8) low profile (1mm thick). RoHS Compliant General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. Application DC - DC Conversion S D D D 1 2 3 3 6 D G D Pin 1 D D 5 4 D G S SuperSOTTM -6 MOSFET Maximum Ratings TA= 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 12 -4.5 -20 1.6 0.8 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 C/W Package Marking and Ordering Information Device Marking .638Z Device FDC638APZ Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDC638APZ Rev.B 1 www.fairchildsemi.com FDC638APZ P-Channel 2.5V PowerTrench(R) Specified MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V TJ = 55C -20 -9.4 -1 -10 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) ID(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance On-State Drain Current Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.8A VGS = -4.5V, ID = -4.5A, TJ = 125C VGS = -10V, VDS = -4.5A VDS = -10V, ID = -4.5A -20 18 -0.4 -0.8 2.9 37 52 50 43 68 72 A S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 750 155 130 1000 210 195 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to -4.5V VDD = -5V ID = -4.5A VDD = -5V, ID = -4.5A VGS = -4.5V, RGEN = 6 6 20 48 47 8 2 2 12 31 77 72 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A Reverse Recovery Time Reverse Recovery Charge (Note 2) -0.8 24 13 -1.3 -1.2 36 20 A V ns nC IF = -4.5A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.RJC is guaranteed by design while RCA is determined by user's board design. a. 78C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156C/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDC638APZ Rev.B 2 www.fairchildsemi.com FDC638APZ P-Channel 2.5V PowerTrench(R) Specified MOSFET Typical Characteristics TJ = 25C unless otherwise noted 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.2 VGS = -3.0V VGS = -2.5V VGS = -2.0V VGS = -2.5V -ID, DRAIN CURRENT (A) 15 VGS = -3.5V VGS = -4.5V 1.8 VGS = -3.0V 10 VGS = -2.0V 1.4 VGS = -3.5V 5 VGS = -1.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4.5V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.6 0 5 10 -ID, DRAIN CURRENT(A) 15 20 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID =-4.5A VGS = -4.5V 160 120 TJ = 125oC 80 40 0 1.5 ID = -2.2A TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2.0 2.5 3.0 3.5 4.0 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VDD = -5V 15 1 0.1 0.01 0.001 TJ = -55oC TJ = 150oC TJ = 25oC 10 TJ = 150oC TJ = 25oC TJ = -55oC 5 0 1.0 1.5 2.0 2.5 3.0 0.0001 0.0 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDC638APZ Rev.B 3 www.fairchildsemi.com FDC638APZ P-Channel 2.5V PowerTrench(R) Specified MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -4.5A VDD = -5V 2000 4 3 2 1 0 VDD = -10V VDD = -15V 1000 CAPACITANCE (pF) Ciss Coss 100 0 2 4 6 8 Qg, GATE CHARGE(nC) 10 12 70 0.1 f = 1MHz VGS = 0V Crss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 -Ig, GATE LEAKAGE CURRENT(mA) 1 VGS = 0V -ID, DRAIN CURRENT (A) 0.1 0.01 1E-3 TJ = 25oC TJ = 150oC rDS(on) LIMIT 10us 100us 1ms 10 1 10ms 100ms 1E-4 1E-5 0.1 SINGLE PULSE TJ = MAX RATED TA = 25OC 1s DC 0 5 10 15 -VGS, GATE TO SOURCE VOLTAGE(V) 20 0.01 0.1 1 10 50 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 50 P(PK),PEAK TRANSIENT POWER (W) SINGLE PULSE o RJA = 156 C/W TA=25 C o Figure 10. Forward Bias Safe Operating Area DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA 40 30 20 10 0 -3 10 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM SINGLE PULSE 0.01 t1 SINGLE PULSE t2 10 -2 10 -1 10 0 10 1 10 2 0.001 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10 -3 10 -2 10 -1 10 0 10 1 10 2 t, PULSE WIDTH (s) t, RECTANGULAR PULSE DURATION (s) Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve FDC638APZ Rev.B 4 www.fairchildsemi.com FDC638ASPZ P-Channel 2.5V PowerTrench(R) Specified MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDC638APZ Rev. B 5 www.fairchildsemi.com |
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